u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tip36, TIP36A, tip36b, tip36c pnp silicon power transistors ? designed for complementary use with the tip35 series ? 125 w at 25c case temperature ? 25 a continuous collector current ? 40 a peak collector current ? customer-specified selections available sot-93 (to b c c c e c package p view) 1 'o 3 _ \ x pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-base voltage (ie = 0) collector-emitter voltage (ib = 0) tip36 TIP36A tip36b tip36c tip36 TIP36A tip36b tip36c emitter-base voltage continuous collector current peak collector current (see note 1) continuous base current continuous device dissipation at (or below) 25c case temperature (see note 2) continuous device dissipation at (or below) 25c free air temperature (see note 3) undamped inductive load energy (see note 4) operating junction temperature range storage temperature range lead temperature 3.2 mm from case for 10 seconds symbol vcbo vceo vebo ic 'cm ib plot plot '/2lic2 ti ts.g tl value -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -6510+150 -65to+150 250 unit v v v a a a w w rnj c c c notes: 1. this value applies for tp<0.3 ms, duty cycle < 10%. 2. derate linearly to 150c case temperature at the rate of 1 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, !b(on) = -0.4 a, rbe = 100 u nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tip36, TIP36A, tip36b, tip36c pnp silicon power transistors electrical characteristics at 25c case temperature parameter collector-emitter (br)ceo breakdown v0|tage collector-emitter ces cut-off current collector cut-off ceo current emitter cut-off 'ebo current forward current hfe transfer ratio collector-emitter ce(5at> saturation voltage base-emitter be voltage small signal forward hfp current transfer ratio small signal forward current transfer ratio test conditions tip36 TIP36A '<== -3ma |b = tip36b . (see note 5) t|p36c vce = -80v vbe = 0 tip36 vce = -100v vbe = 0 TIP36A vce = -120v vbe = 0 tip36b vce = -140 v vbe = 0 tip36c vce= -30v ib = 0 tip36/36a vce= -60v ib = 0 ' tip36b/36c veb = -5 v lc = 0 vrf = -4v ic = -1.5a oh (see notes 5 and 6) vce = -4v ic=-15a 'b= "1'5a lc=-15a (see notes 5 and 6) ib= -5 a lc= -25 a v ' : - i:::;:: ?.?..-? vce = -10v lc= -1 a f = 1 khz vce= -10v lc= -1 a f = 1 mhz win -40 -60 -80 -100 25 10 25 3 typ max -0.7 -0.7 -0.7 -0.7 -1 -1 -1 50 -1.8 -4 -2 -4 unit v ma ma ma v v notes: 5. these parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter r8jc junction to case thermal resistance reja junction to free air thermal resistance min typ max 1 35.7 unit c/w c/w resistive-load-switching characteristics at 25c case temperature parameter ton turn-on time toff turn-off time test conditions f ic = -15a lb(on) = -1.5a lb(off)=1.5a vbe(off) - 4. 1 5 v rl - 2 n tp - 20 us, dc < 2% min typ 1.1 0.8 max unit us us voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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